A review on electrical transport properties of thin film Schottky diode
نویسندگان
چکیده
The article outlines an inclusive list of thin film Schottky diodes (TFSD) references. review audits the fabrication and characterization TF metal-semiconductor (MS) diode, a TFSD. work functions metal ( ϕ m ) semiconducting material s determines whether established MS contact is ohmic or rectifying. Current-voltage (I – V) capacitance-voltage (C characterizations are essential electrical transport measures TFSDs. I V C outcomes conferred, archetypal results parroted. TFSD device emblematic heterojunction diode (HJD). rectification ratio (RR), saturation current 0 ), ideality factor (n), barrier height (ϕ B carrier concentration may all be calculated using data. Thermionic emission (TE) and/or space charge limited conduction mechanisms (SCLC) conduct electricity in Anderson’s model can theoretically used to construct energy band diagram.
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ژورنال
عنوان ژورنال: IOP conference series
سال: 2022
ISSN: ['1757-899X', '1757-8981']
DOI: https://doi.org/10.1088/1757-899x/1258/1/012052